Gan Power Supply

GaN’s high-speed switching is changing the way power systems look today, enabling market trends such as ultra-thin power supplies, motor drive integrated robotics and achieving >200% more power density in next-generation datacenters and 5G rectifiers.

Gan power supply. The GaN Power Supply series contains a wide range of products including I.T.E. 160W GaN Series, I.T.E. 200W GaN Series, Medical 200W GaN Series, I.T.E. / Medical 250W GaN Series, I.T.E. / Medical 300W GaN Series offered by Adapter Technology Co., Ltd., a Taiwan based OEM_ODM manufacturer and supplier. GaN power transistors are manufactured by growing layers of GaN and AlGaN (aluminum GaN) on silicon substrates – the same as standard Si MOSFETs used in high volume. The hetero-interface between GaN and AlGaN forms a two-dimensional electron gas (2DEG) and is the basis for a high mobility channel. Using GaN Systems’ power semiconductors results in power supplies that are more efficient and higher power density. This results in significant OPEX and CAPEX reductions and the opportunity to postpone future Data Center build-outs. Compuware is a global leader of power supply design and manufacturing. Its focus is on high efficiency designs. Gallium nitride (GaN) offers fundamental advantages over silicon. In particular, the higher critical electrical field makes it very attractive for power semiconductor devices with outstanding specific dynamic on-state resistance and smaller capacitances compared to silicon MOSFETs, which makes GaN HEMTs great for high speed switching.

Our Vision is to establish ourselves as an industry leader in GaN device technology and GaN based power electronics systems. By integrating and leveraging our strength in GaN HEMT power device design, controller and driver IC design as well as power electronics system design, we are creating a vertically integrated design value chain that enables us to deliver advanced products for our customers. power supply design. Previous uses of GaN in LEDs and wireless applications might give the impression that the technology was ready for power supplies, too. But, in fact, significant process and device development was required to use GaN in power FETs and have slowed product development. Moreover, differences in new FETs from their Si GaN is now achieving widespread success simply because it enables increased efficiency at a reduced size – two of the key power supply requirements. Datacentres, the military and manufacturers of equipment requiring fanless operation, lower operating cost and smaller size have been early adopters of this technology. GaN Power Devices: Potential, Benefits, and Keys to Successful Use By Bill Schweber for Mouser Electronics For well over a decade, industry experts and analysts have been predicting that viable power-switching devices based on gallium nitride (GaN) technology were “just around the corner.” These GaN-based switches would offer greater efficiency, power handling, and other performance.

GaN on silicon is being developed mainly on six-inch wafers, though some grow it on eight-inch wafers. “We will still see GaN-based discrete devices, but it’s more suitable for high power applications for example in the data center or the power supply for base stations,” said Ben Slimane. This 1600W power supply is mainly targeting gamers PCs. The 1.6kW power is large enough to supply a Desktop PC with a large microprocessor and several energy consuming graphic cards. The real innovation in this specific PSU is that it’s using GaN based semiconductor: The AX1600i uses Transphorm’s TPH3205WS 650V FETs in a bridgeless totem. Power Management; Power Supply; 5 GaN Power Devices. Gallium-nitride power transistors occupy a unique performance niche. Here is why, along with five GaN devices to consider for your next design. In a power supply, changing from silicon MOSFETs to transistors based on gallium nitride (GaN) yields efficiency improvements. A GaN device (Fig. 2) has lower on-resistance R DS(ON) than a silicon.

Today’s data centers account for 2% of the world’s energy use. And that percentage is rapidly growing to more than 5%. Data center power losses cost operators millions of dollars. Using GaN Systems’ power semiconductors results in power supplies that are more efficient and higher power density. This results in significant OPEX and CAPEX. • Navitas GaNFast™ power ICs enable charging rates up to 5x faster than silicon-based chargers and can make universal GaN Fast chargers a reality. Thin is in: Let’s Beat the Bulge! • Flat-screen TV technologies have advanced to making millimeters-thin monitors possible, but the bulge of the power supply is expanding the back-side of. However, GaN uniquely enables power system engineers to use a hardswitching topology with a specific power factor correction technique (bridgeless totempole) that is, in most cases, impractical with silicon. This system configuration maximizes the GaN’s total potential (efficiency, power density and size) while lowering system component count. 2019 Power GaN Patent Landscape - GaN Power Market Forecast to be Worth Over $350M by 2024, Rising at a CAGR of 85% - ResearchAndMarkets.com November 26, 2019 10:20 AM Eastern Standard Time

These GaN desktop adapters offer significant improvements to efficiency, size, and weight over conventional silicon-based supplies. Figure 3: Comparison of Si based and GaN based adapter form factors Conclusion. Power supply manufacturers are always seeking ways to increase the efficiency and power density of their products. Let’s compare a Si-based PFC to a GaN-based bridgeless totem pole PFC for a 2-3 kW power supply. The Si interleaved topology can only approach the efficiency of the GaN totem pole if an active bridge is used. Integrating along the power path reduces stray inductance and allows fast and clean commutations. GaN integration means getting the power transistors together with the gate drivers on the same die to start with. GaN for power conversion has now proved its ability to enable higher operating frequencies and higher efficiency, however… 5 of 26 Gallium Nitride (GaN) Ac-Dc Desktop Power Adapters Gallium Nitride (GaN) is a wide bandgap semiconductor compound that offers many advantages over more traditionally-used silicon. The use of GaN as a transistor in switching applications can increase efficiency, reduce form factor, and extend the operating temperature range.

Power supply using Gallium Nitride (GaN) HEMTs as the switching devices Front-end of the power converter converts a universal AC line to a 385 dc bus Second stage is a DC-DC stage that converts the 385 V DC bus to a 12 V output with a max rated load current of 20 A